International Electrotechnical Commission
Glossary

ENingot manufacturing process 
process by which an ingot is manufactured

a) Czochralski process

method of growing a perfect large-size single crystal by slowly lifting, under careful cooling conditions, a rotating seed crystal from a counter-rotating molten silicon bath

NOTE 1 The Czochralski process produces a cylindrical-section silicon ingot, which can be cut into wafers that are usually round or pseudo-square

b) directional solidification

method of making large-grain multicrystalline silicon ingots by controlling the cooling rate of molten silicon that has been placed in a square-section crucible

NOTE 2 Directional solidification produces a square-section silicon ingot that can be cut into wafers that are square or rectangular

c) electromagnetic casting

method of making multicrystalline silicon ingots by which a continuously fed square-sectional open-bottom cold crucible of molten silicon is continuously pulled downward through an electromagnetic field

NOTE 3 Electromagnetic casting produces a square-section silicon ingot that can be cut into wafers that are square or rectangular

d) float zone melting

method of growing and purifying high quality single crystal ingots


TC/SC:82Terms     Info     Publications
Published in:IEC 61836, ed. 2.0 (2007-12) Terms     Info
Reference number:3.1.32

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