International Electrotechnical Commission
Glossary

ENjunction (of semiconductors) 
transition layer between semiconducting regions of different electrical properties, or between a semiconductor and a layer of a different type, being characterized by a potential barrier impeding the movement of charge carriers from one region to the other

a) cell junction

junction between the P-type semiconductor and N-type semiconductor of a PV cell

NOTE 1 The PV cell junction lies within the cell barrier or depletion zone

b) heterojunction

PN junction in which the two regions differ in their doping conductivities, and also in their atomic compositions

c) homojunction

PN junction in which the two regions differ in their doping conductivities, but not in their atomic compositions

d) Schottky barrier

junction between a metal and a semiconductor in which a transition region, formed at the surface of the semiconductor, acts as a rectifying barrier

e) PIN junction

junction consisting of an intrinsic semiconductor between a P-type semiconductor and an N-type semiconductor, intended to reduce the recombination of minority carriers

NOTE 2 A PIN junction is widely used in thin film amorphous silicon PV cells

f) PN junction

junction between a P-type semiconductor and an N-type semiconductor


TC/SC:82Terms     Info     Publications
Published in:IEC 61836, ed. 2.0 (2007-12) Terms     Info
Reference number:3.1.34
Source:IEV 521-02-71, IEV 521-02-72

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