| technique that combines etching with corrosive gas and sputtering with ions
Note 1 to entry: Under reactive ion etching, material is removed selectively in the vertical direction under the mask by both chemical reaction and physical bombardment (sputtering) with ions and radicals produced in plasma. Unlike in anisotropic etching wherein the direction of erosion depends on the crystal orientation of the material, in reactive ion etching the direction of removal is determined by the direction of the ion stream. Reactive ion etching results in less undercut erosion from the edge beneath the mask than does wet etching.
Note 2 to entry: This note applies to the French language only.